Taiwan Semiconductor Corporation - BAT42 A0G

KEY Part #: K6445959

[1929PC Stock]


    Nimewo Pati:
    BAT42 A0G
    Manifakti:
    Taiwan Semiconductor Corporation
    Detaye deskripsyon:
    DIODE SCHOTTKY 30V 200MA DO35.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Transistors - JFETs, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays and Modil pouvwa chofè ...
    Avantaj konpetitif:
    We specialize in Taiwan Semiconductor Corporation BAT42 A0G electronic components. BAT42 A0G can be shipped within 24 hours after order. If you have any demands for BAT42 A0G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BAT42 A0G Atribi pwodwi yo

    Nimewo Pati : BAT42 A0G
    Manifakti : Taiwan Semiconductor Corporation
    Deskripsyon : DIODE SCHOTTKY 30V 200MA DO35
    Seri : -
    Estati Pati : Obsolete
    Kalite dyòd : Schottky
    Voltage - DC Ranvèse (Vr) (Max) : 30V
    Kouran - Mwayèn Rèktifye (Io) : 200mA
    Voltage - Forward (Vf) (Max) @ Si : 650mV @ 50mA
    Vitès : Small Signal =< 200mA (Io), Any Speed
    Ranvèse Tan Reverse (trr) : 5ns
    Kouran - Fèy Reverse @ Vr : 100nA @ 25V
    Kapasite @ Vr, F : 7pF @ 1V, 1MHz
    Mounting Kalite : Through Hole
    Pake / Ka : DO-204AH, DO-35, Axial
    Pake Aparèy Founisè : DO-35
    Operating Tanperati - Junction : -65°C ~ 125°C

    Ou ka enterese tou
    • VS-8EWL06FNTR-M3

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 600V 8A DPAK. Rectifiers Ultrafast 8A 600V 60ns

    • VS-6EWL06FNTR-M3

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 600V 6A DPAK. Rectifiers Ultrafast 6A 600V 59ns

    • VS-8EWF12STR-M3

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 1.2KV 8A D-PAK. Schottky Diodes & Rectifiers New Input Diodes - D-PAK-e3

    • VS-15EWH06FNTR-M3

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 600V 15A DPAK. Rectifiers Hyperfast 15A 600V 22ns

    • VS-8EWS08STR-M3

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 800V 8A D-PAK. Schottky Diodes & Rectifiers New Input Diodes - D-PAK-e3

    • VT3080S-E3/4W

      Vishay Semiconductor Diodes Division

      DIODE SCHOTTKY 30A 80V TO-220AB. Schottky Diodes & Rectifiers 30A,80V,TRENCH