[13788PC Stock]
- Nimewo Pati:
- IRLL014PBF
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 60V 2.7A SOT223.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays, Modil pouvwa chofè, Diodes - RF, Diodes - Zener - Arrays and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix IRLL014PBF electronic components. IRLL014PBF can be shipped within 24 hours after order. If you have any demands for IRLL014PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLL014PBF Atribi pwodwi yo
Nimewo Pati :
IRLL014PBF
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 60V 2.7A SOT223
Seri :
-
Estati Pati :
Discontinued at Digi-Key
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4V, 5V
RD sou (Max) @ Id, Vgs :
200 mOhm @ 1.6A, 5V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
8.4nC @ 5V
Vgs (Max) :
±10V
Antre kapasite (Ciss) (Max) @ Vds :
400pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
2W (Ta), 3.1W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-223
Pake / Ka :
TO-261-4, TO-261AA
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