BAV21W-G3-08 Pricing (USD) [1628441PC Stock]
- 1 pcs$0.02271
- 3,000 pcs$0.02168
- 6,000 pcs$0.01885
- 15,000 pcs$0.01603
- 30,000 pcs$0.01508
- 75,000 pcs$0.01414
- 150,000 pcs$0.01257
- Nimewo Pati:
- BAV21W-G3-08
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 200V 250MA SOD123. Diodes - General Purpose, Power, Switching 250 Volt 200mA 50ns 1A IFSM
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division BAV21W-G3-08 electronic components. BAV21W-G3-08 can be shipped within 24 hours after order. If you have any demands for BAV21W-G3-08, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAV21W-G3-08 Atribi pwodwi yo
Nimewo Pati :
BAV21W-G3-08
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 200V 250MA SOD123
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
250mA (DC)
Voltage - Forward (Vf) (Max) @ Si :
1V @ 100mA
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
50ns
Kouran - Fèy Reverse @ Vr :
100nA @ 150V
Kapasite @ Vr, F :
1.5pF @ 0V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
SOD-123
Pake Aparèy Founisè :
SOD-123
Operating Tanperati - Junction :
175°C (Max)
Dènye nouvèl
Ou ka enterese tou
-
BAS19
ON Semiconductor
DIODE GEN PURP 120V 200MA SOT23. Diodes - General Purpose, Power, Switching 120V 200mA
-
MMBD4448
ON Semiconductor
DIODE GEN PURP 75V 200MA SOT23-3. Diodes - General Purpose, Power, Switching Hi Conductance Fast
-
MMBD1501A
ON Semiconductor
DIODE GEN PURP 200V 200MA SOT23. Diodes - General Purpose, Power, Switching High Voltage General Purpose
-
BAS29
ON Semiconductor
DIODE GEN PURP 120V 200MA SOT23. Diodes - General Purpose, Power, Switching 120V 200mA
-
BAV20W-E3-18
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 250MA SOD123. Diodes - General Purpose, Power, Switching 200V 625mA 1A IFSM
-
1N4148W-HE3-18
Vishay Semiconductor Diodes Division
DIODE GEN PURP 75V 150MA SOD123. Diodes - General Purpose, Power, Switching 100 Volt 500mA 4ns
Pati cho
- MBRB10H50HE3/45
- MBRB16H35-E3/81
- GP10KE-M3/73
- 1N4005-N-0-2-BP
- 1N4003 BK
- IRD3CH31DB6
- SS310HE-TP
- CLL914 BK
- JANTX1N6761UR-1
- GP10-4003E-M3/54
- EGP10F-M3/54
- VS-30WQ06FNTRLPBF
- UH1B-E3/61T
- MBRF7H60HE3/45
- RGP15DHE3/54
- RB420D-TP
- VS-90SQ045TR
- DGP20HE3/54
- 1N5622GP-E3/73
- U1GWJ49(TE12L,F)
- STTH3R04
- 2A02-T
- STTH10R04G
- FFPF04U150STU
- VS-20L15TPBF
- MBR2515L
- MBR845RL
- B280-13
- 60CPF10
- 40EPS08
- MA3X72100L
- MA2J11600L
- DL4001
- IDD15E60BUMA1
- 2A01-TP
- IDW30E60AFKSA1
- RGP02-14E-E3/73
- HS5M M6G
- GL41DHE3/97
- SE15PD-M3/85A