Manifakti :
Infineon Technologies
Deskripsyon :
IC DUAL MOSFET IGBT 8-DIP
Kondwi konte genyen :
Low-Side
Kalite Chèn :
Independent
Kalite Gate :
IGBT, N-Channel MOSFET
Voltage - Pwovizyon pou :
6V ~ 20V
Vòltaj lojik - VIL, VIH :
0.8V, 2.7V
Kouran - Peak Sòti (Sous, Lavabo) :
2.3A, 3.3A
Kalite Antre :
Non-Inverting
Segondè Voltage Side - Max (Bootstrap) :
-
Rise / Fall Time (Tip) :
15ns, 10ns
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
8-DIP (0.300", 7.62mm)
Pake Aparèy Founisè :
8-PDIP