Vishay Semiconductor Diodes Division - UG1B-E3/54

KEY Part #: K6428086

UG1B-E3/54 Pricing (USD) [898984PC Stock]

  • 1 pcs$0.04114
  • 5,500 pcs$0.03805

Nimewo Pati:
UG1B-E3/54
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 100V 1A DO204AL. Rectifiers 100 Volt 1.0A 15ns 40 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Single and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division UG1B-E3/54 electronic components. UG1B-E3/54 can be shipped within 24 hours after order. If you have any demands for UG1B-E3/54, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UG1B-E3/54 Atribi pwodwi yo

Nimewo Pati : UG1B-E3/54
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 100V 1A DO204AL
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 950mV @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 25ns
Kouran - Fèy Reverse @ Vr : 5µA @ 100V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : DO-204AL, DO-41, Axial
Pake Aparèy Founisè : DO-204AL (DO-41)
Operating Tanperati - Junction : -55°C ~ 150°C

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