Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
DIODE SCHOTTKY 30V 200MA DO35
Voltage - DC Ranvèse (Vr) (Max) :
30V
Kouran - Mwayèn Rèktifye (Io) :
200mA
Voltage - Forward (Vf) (Max) @ Si :
450mV @ 15mA
Vitès :
Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) :
5ns
Kouran - Fèy Reverse @ Vr :
100nA @ 25V
Kapasite @ Vr, F :
7pF @ 1V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
DO-204AH, DO-35, Axial
Pake Aparèy Founisè :
DO-35
Operating Tanperati - Junction :
-65°C ~ 125°C