Sanken - SJPB-D4V

KEY Part #: K6430893

SJPB-D4V Pricing (USD) [537478PC Stock]

  • 1 pcs$0.07262
  • 9,000 pcs$0.07226

Nimewo Pati:
SJPB-D4V
Manifakti:
Sanken
Detaye deskripsyon:
DIODE SCHOTTKY 40V 1A SJP.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Diodes - RF, Tiristors - SCR - Modil yo and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in Sanken SJPB-D4V electronic components. SJPB-D4V can be shipped within 24 hours after order. If you have any demands for SJPB-D4V, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SJPB-D4V Atribi pwodwi yo

Nimewo Pati : SJPB-D4V
Manifakti : Sanken
Deskripsyon : DIODE SCHOTTKY 40V 1A SJP
Seri : -
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 40V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 550mV @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 100µA @ 40V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : 2-SMD, J-Lead
Pake Aparèy Founisè : SJP
Operating Tanperati - Junction : -40°C ~ 150°C
Ou ka enterese tou
  • SR10150-G

    Comchip Technology

    DIODE SCHOTTKY 150V 10A ITO220AB. Schottky Diodes & Rectifiers VR=150V, IO=10A

  • SB260-E3/73

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 60V 2A DO204AC. Schottky Diodes & Rectifiers 60 Volt 2.0 Amp 60 Amp IFSM

  • SS10P6HM3_A/H

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 60V 7A TO277A. Schottky Diodes & Rectifiers 10A,60V,SM SKY RECT.

  • AR4PMHM3_A/H

    Vishay Semiconductor Diodes Division

    DIODE AVALANCH 1KV 1.8A TO277A. Rectifiers 4A,1000V, SMPC Fast Rec Avalanche

  • VS-4ESH01HM3/87A

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 4A TO277A. Rectifiers Hypfst Rct 4A 100V AEC-Q101

  • AR3PDHM3_A/H

    Vishay Semiconductor Diodes Division

    DIODE AVALANCHE 200V 1.8A TO277A. Rectifiers 3A,200V, SMPC Fast Rec Avalanche