Micron Technology Inc. - MT47H64M8SH-25E AIT:H

KEY Part #: K938190

MT47H64M8SH-25E AIT:H Pricing (USD) [19486PC Stock]

  • 1 pcs$2.36328
  • 1,518 pcs$2.35152

Nimewo Pati:
MT47H64M8SH-25E AIT:H
Manifakti:
Micron Technology Inc.
Detaye deskripsyon:
IC DRAM 512M PARALLEL 60FBGA. DRAM DDR2 512M 64MX8 FBGA
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Lojik - Translators, Level Shifters, PMIC - Chofè motè, contrôleur, PMIC - regilatè Voltage - lineyè, PMIC - Jesyon Batri, Lojik - FIFOs memwa, PMIC - PFC (Koreksyon faktè pouvwa), Lineyè - multiplikatè analog, divizeur and PMIC - Dirije Chofè yo ...
Avantaj konpetitif:
We specialize in Micron Technology Inc. MT47H64M8SH-25E AIT:H electronic components. MT47H64M8SH-25E AIT:H can be shipped within 24 hours after order. If you have any demands for MT47H64M8SH-25E AIT:H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MT47H64M8SH-25E AIT:H Atribi pwodwi yo

Nimewo Pati : MT47H64M8SH-25E AIT:H
Manifakti : Micron Technology Inc.
Deskripsyon : IC DRAM 512M PARALLEL 60FBGA
Seri : -
Estati Pati : Last Time Buy
Kalite memwa yo : Volatile
Fòma memwa : DRAM
Teknoloji : SDRAM - DDR2
Size memwa : 512Mb (64M x 8)
Frè frekans lan : 400MHz
Ekri Sik Tan - Pawòl, Page : 15ns
Tan aksè : 400ps
Entèfas memwa : Parallel
Voltage - Pwovizyon pou : 1.7V ~ 1.9V
Operating Tanperati : -40°C ~ 95°C (TC)
Mounting Kalite : Surface Mount
Pake / Ka : 60-TFBGA
Pake Aparèy Founisè : 60-FBGA (10x18)

Ou ka enterese tou
  • AT27C4096-90PU

    Microchip Technology

    IC EPROM 4M PARALLEL 40DIP. EPROM 4Mb (256Kx16) OTP 5V 90ns

  • 71V3576S150PFGI

    IDT, Integrated Device Technology Inc

    IC SRAM 4.5M PARALLEL 100TQFP.

  • 71V3577S75PFGI

    IDT, Integrated Device Technology Inc

    IC SRAM 4.5M PARALLEL 100TQFP. SRAM 4M 3.3V I/O PBSRAM SLOW X

  • W94AD2KBJX5I

    Winbond Electronics

    IC DRAM 1G PARALLEL 90VFBGA. DRAM 1G mDDR, x32, 200MHz, Ind temp

  • W979H2KBVX2I

    Winbond Electronics

    IC DRAM 512M PARALLEL 134VFBGA. DRAM 512Mb LPDDR2, x32, 400MHz, -40 85C

  • TC58BYG2S0HBAI4

    Toshiba Memory America, Inc.

    4GB SLC BENAND 24NM BGA 9X11 EE. NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)