Vishay Semiconductor Diodes Division - RGF1KHE3/5CA

KEY Part #: K6439855

[7500PC Stock]


    Nimewo Pati:
    RGF1KHE3/5CA
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE GEN PURP 800V 1A DO214BA.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - JFETs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Single, Diodes - RF, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays and Transistors - IGBTs - Single ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division RGF1KHE3/5CA electronic components. RGF1KHE3/5CA can be shipped within 24 hours after order. If you have any demands for RGF1KHE3/5CA, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RGF1KHE3/5CA Atribi pwodwi yo

    Nimewo Pati : RGF1KHE3/5CA
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE GEN PURP 800V 1A DO214BA
    Seri : Automotive, AEC-Q101, Superectifier®
    Estati Pati : Discontinued at Digi-Key
    Kalite dyòd : Standard
    Voltage - DC Ranvèse (Vr) (Max) : 800V
    Kouran - Mwayèn Rèktifye (Io) : 1A
    Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 1A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : 500ns
    Kouran - Fèy Reverse @ Vr : 5µA @ 800V
    Kapasite @ Vr, F : 8.5pF @ 4V, 1MHz
    Mounting Kalite : Surface Mount
    Pake / Ka : DO-214BA
    Pake Aparèy Founisè : DO-214BA (GF1)
    Operating Tanperati - Junction : -65°C ~ 175°C

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