Vishay Semiconductor Diodes Division - RS3JHE3/57T

KEY Part #: K6446714

[1671PC Stock]


    Nimewo Pati:
    RS3JHE3/57T
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE GEN PURP 600V 3A DO214AB.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Tiristors - DIACs, SIDACs, Tiristors - SCR, Transistors - IGBTs - Single, Transistors - Objektif espesyal, Diodes - Zener - Arrays and Transistors - Pwogramasyon Unijunction ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division RS3JHE3/57T electronic components. RS3JHE3/57T can be shipped within 24 hours after order. If you have any demands for RS3JHE3/57T, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RS3JHE3/57T Atribi pwodwi yo

    Nimewo Pati : RS3JHE3/57T
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE GEN PURP 600V 3A DO214AB
    Seri : -
    Estati Pati : Obsolete
    Kalite dyòd : Standard
    Voltage - DC Ranvèse (Vr) (Max) : 600V
    Kouran - Mwayèn Rèktifye (Io) : 3A
    Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 2.5A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : 250ns
    Kouran - Fèy Reverse @ Vr : 10µA @ 600V
    Kapasite @ Vr, F : 34pF @ 4V, 1MHz
    Mounting Kalite : Surface Mount
    Pake / Ka : DO-214AB, SMC
    Pake Aparèy Founisè : DO-214AB (SMC)
    Operating Tanperati - Junction : -55°C ~ 150°C

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