BYG10M-M3/TR3 Pricing (USD) [703168PC Stock]
- 1 pcs$0.05352
- 15,000 pcs$0.05326
- Nimewo Pati:
- BYG10M-M3/TR3
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE AVALANCHE 1KV 1.5A. Rectifiers 1.5A,1000V VGSC-STD Avalanche SMD
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Single, Tiristors - TRIACs, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Modil yo and Transistors - Objektif espesyal ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division BYG10M-M3/TR3 electronic components. BYG10M-M3/TR3 can be shipped within 24 hours after order. If you have any demands for BYG10M-M3/TR3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BYG10M-M3/TR3 Atribi pwodwi yo
Nimewo Pati :
BYG10M-M3/TR3
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE AVALANCHE 1KV 1.5A
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
Kalite dyòd :
Avalanche
Voltage - DC Ranvèse (Vr) (Max) :
1000V
Kouran - Mwayèn Rèktifye (Io) :
1.5A
Voltage - Forward (Vf) (Max) @ Si :
1.15V @ 1.5A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
4µs
Kouran - Fèy Reverse @ Vr :
1µA @ 1000V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AC, SMA
Pake Aparèy Founisè :
DO-214AC (SMA)
Operating Tanperati - Junction :
-55°C ~ 150°C
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