Toshiba Semiconductor and Storage - HN4B01JE(TE85L,F)

KEY Part #: K6391264

HN4B01JE(TE85L,F) Pricing (USD) [1309823PC Stock]

  • 1 pcs$0.02824

Nimewo Pati:
HN4B01JE(TE85L,F)
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
TRANS NPN/PNP 50V 0.15A ESV PLN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - RF, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Single and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage HN4B01JE(TE85L,F) electronic components. HN4B01JE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for HN4B01JE(TE85L,F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HN4B01JE(TE85L,F) Atribi pwodwi yo

Nimewo Pati : HN4B01JE(TE85L,F)
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : TRANS NPN/PNP 50V 0.15A ESV PLN
Seri : -
Estati Pati : Active
Kalite tranzistò : NPN, PNP (Emitter Coupled)
Kouran - Pèseptè (Ic) (Max) : 150mA
Voltage - Pèseptè ki emèt deba (Max) : 50V
Vce saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Kouran - Cutoff Pèseptè (Max) : 100nA (ICBO)
DC Kouran Akeri (HFE) (Min) @ Ic, Vce : 120 @ 10MA, 100MA
Pouvwa - Max : 100mW
Frekans - Tranzisyon : 80MHz
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : SOT-553
Pake Aparèy Founisè : ESV

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