VBT1080C-E3/8W Pricing (USD) [174381PC Stock]
- 1 pcs$0.21211
- 1,600 pcs$0.19310
- Nimewo Pati:
- VBT1080C-E3/8W
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE SCHOTTKY 10A 80V TO-263AB. Schottky Diodes & Rectifiers 10A,80V,Trench
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Transistors - Pwogramasyon Unijunction, Diodes - Zener - Arrays, Diodes - Bridge rèktifikateur, Tiristors - SCR, Diodes - RF and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division VBT1080C-E3/8W electronic components. VBT1080C-E3/8W can be shipped within 24 hours after order. If you have any demands for VBT1080C-E3/8W, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VBT1080C-E3/8W Atribi pwodwi yo
Nimewo Pati :
VBT1080C-E3/8W
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE SCHOTTKY 10A 80V TO-263AB
Seri :
TMBS®
Estati Pati :
Active
Konfigirasyon dyòd :
1 Pair Common Cathode
Kalite dyòd :
Schottky
Voltage - DC Ranvèse (Vr) (Max) :
80V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) :
5A
Voltage - Forward (Vf) (Max) @ Si :
720mV @ 5A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
400µA @ 80V
Operating Tanperati - Junction :
-55°C ~ 150°C
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè :
TO-263AB
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