Nexperia USA Inc. - PMEG3010AESBYL

KEY Part #: K6456506

PMEG3010AESBYL Pricing (USD) [1555320PC Stock]

  • 1 pcs$0.02378
  • 10,000 pcs$0.02159
  • 30,000 pcs$0.02025
  • 50,000 pcs$0.01800

Nimewo Pati:
PMEG3010AESBYL
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
DIODE SCHOTTKY 30V 1A SOD993. Schottky Diodes & Rectifiers 1A MEGA Schottky Barrier Rectifier
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Transistors - FETs, MOSFETs - Single and Diodes - Zener - Single ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. PMEG3010AESBYL electronic components. PMEG3010AESBYL can be shipped within 24 hours after order. If you have any demands for PMEG3010AESBYL, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PMEG3010AESBYL Atribi pwodwi yo

Nimewo Pati : PMEG3010AESBYL
Manifakti : Nexperia USA Inc.
Deskripsyon : DIODE SCHOTTKY 30V 1A SOD993
Seri : -
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 30V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 480mV @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 3.5ns
Kouran - Fèy Reverse @ Vr : 255µA @ 20V
Kapasite @ Vr, F : 86pF @ 1V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : 2-XDFN
Pake Aparèy Founisè : DSN1006-2
Operating Tanperati - Junction : 150°C (Max)

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