Nimewo Pati :
VS-GA100TS120UPBF
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
IGBT 1200V 182A 520W INT-A-PAK
Nou konte genyen :
Half Bridge
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
182A
Vce (sou) (Max) @ Vge, Ic :
3V @ 15V, 100A
Kouran - Cutoff Pèseptè (Max) :
1mA
Antre kapasite (Cies) @ Vce :
18.67nF @ 30V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
INT-A-PAK