NXP USA Inc. - PDTC114ES,126

KEY Part #: K6527483

[2817PC Stock]


    Nimewo Pati:
    PDTC114ES,126
    Manifakti:
    NXP USA Inc.
    Detaye deskripsyon:
    TRANS PREBIAS NPN 500MW TO92-3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR and Transistors - Bipolè (BJT) - Arrays ...
    Avantaj konpetitif:
    We specialize in NXP USA Inc. PDTC114ES,126 electronic components. PDTC114ES,126 can be shipped within 24 hours after order. If you have any demands for PDTC114ES,126, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PDTC114ES,126 Atribi pwodwi yo

    Nimewo Pati : PDTC114ES,126
    Manifakti : NXP USA Inc.
    Deskripsyon : TRANS PREBIAS NPN 500MW TO92-3
    Seri : -
    Estati Pati : Obsolete
    Kalite tranzistò : NPN - Pre-Biased
    Kouran - Pèseptè (Ic) (Max) : 100mA
    Voltage - Pèseptè ki emèt deba (Max) : 50V
    Rezistans - Sèvi (R1) : 10 kOhms
    Rezistans - Sèvi ak emeteur (R2) : 10 kOhms
    DC Kouran Akeri (HFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
    Vce saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA
    Kouran - Cutoff Pèseptè (Max) : 1µA
    Frekans - Tranzisyon : -
    Pouvwa - Max : 500mW
    Mounting Kalite : Through Hole
    Pake / Ka : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Pake Aparèy Founisè : TO-92-3