RB056L-40TE25 Pricing (USD) [766254PC Stock]
- 1 pcs$0.04827
- 1,500 pcs$0.04351
- Nimewo Pati:
- RB056L-40TE25
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- DIODE SCHOTTKY 40V 3A PMDS. Schottky Diodes & Rectifiers DIODE SCHOTTKY 40V3A
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Single, Tiristors - SCR - Modil yo and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor RB056L-40TE25 electronic components. RB056L-40TE25 can be shipped within 24 hours after order. If you have any demands for RB056L-40TE25, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RB056L-40TE25 Atribi pwodwi yo
Nimewo Pati :
RB056L-40TE25
Manifakti :
Rohm Semiconductor
Deskripsyon :
DIODE SCHOTTKY 40V 3A PMDS
Seri :
-
Estati Pati :
Not For New Designs
Kalite dyòd :
Schottky
Voltage - DC Ranvèse (Vr) (Max) :
40V
Kouran - Mwayèn Rèktifye (Io) :
3A
Voltage - Forward (Vf) (Max) @ Si :
670mV @ 3A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
50µA @ 40V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AC, SMA
Pake Aparèy Founisè :
PMDS
Operating Tanperati - Junction :
150°C (Max)
Dènye nouvèl
Ou ka enterese tou
-
RGL34B-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 500MA DO213. Diodes - General Purpose, Power, Switching 100 Volt 0.5A 150ns 10 Amp IFSM
-
RGL34D-E3/83
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 500MA DO213. Diodes - General Purpose, Power, Switching 200 Volt 0.5A 150ns 10 Amp IFSM
-
RGL34B-E3/83
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 500MA DO213. Diodes - General Purpose, Power, Switching 100 Volt 0.5A 150ns 10 Amp IFSM
-
RGL34J-E3/83
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 500MA DO213. Diodes - General Purpose, Power, Switching 600 Volt 0.5A 250ns 10 Amp IFSM
-
BYM07-200-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 500MA DO213. Rectifiers 0.5 Amp 200 Volt
-
BYM07-100-E3/98
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 500MA DO213. Rectifiers 0.5 Amp 100 Volt
Pati cho
- APT10SCE120B
- MBR3100VP-G1
- FR206TA
- CMR3U-04 BK
- CMR3U-01 BK
- VS-18TQ035SPBF
- BAY80-TAP
- SS3H10HE3_A/H
- VS-6TQ035STRRPBF
- BAS1602WH6327XTSA1
- APT20SCD120B
- MBRF750HE3/45
- STPS30SM60D
- S5JHE3/9AT
- 1N3743G R G
- SR304-T-F
- GPP60D-E3/54
- 20ETF12FP
- DGP30HE3/54
- S3520
- MX1H5615
- MA3X028TAL
- USD245
- D6025L
- RK 14V1
- STTH8L06DIRG
- 1N5293UR-1
- 1N4002RL
- 20ETF02STRR
- UF4007 TR
- BY329-1200,127
- S1G-F
- 1F1-TP
- UF5406-AP
- 1N649UR-1
- FESF16HTHE3/45
- FES8AT-E3/45
- RP 3FV4
- RFN5BM2SFHTL
- BAS283-GS18