Toshiba Semiconductor and Storage - 2SA965-Y(F,M)

KEY Part #: K6381902

[9840PC Stock]


    Nimewo Pati:
    2SA965-Y(F,M)
    Manifakti:
    Toshiba Semiconductor and Storage
    Detaye deskripsyon:
    TRANS PNP 800MA 120V TO226-3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Tiristors - TRIACs, Diodes - Rèkteur - Single, Diodes - Bridge rèktifikateur, Diodes - Zener - Arrays, Tiristors - SCR - Modil yo and Transistors - Objektif espesyal ...
    Avantaj konpetitif:
    We specialize in Toshiba Semiconductor and Storage 2SA965-Y(F,M) electronic components. 2SA965-Y(F,M) can be shipped within 24 hours after order. If you have any demands for 2SA965-Y(F,M), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    2SA965-Y(F,M) Atribi pwodwi yo

    Nimewo Pati : 2SA965-Y(F,M)
    Manifakti : Toshiba Semiconductor and Storage
    Deskripsyon : TRANS PNP 800MA 120V TO226-3
    Seri : -
    Estati Pati : Obsolete
    Kalite tranzistò : PNP
    Kouran - Pèseptè (Ic) (Max) : 800mA
    Voltage - Pèseptè ki emèt deba (Max) : 120V
    Vce saturation (Max) @ Ib, Ic : 1V @ 50mA, 500mA
    Kouran - Cutoff Pèseptè (Max) : 100nA (ICBO)
    DC Kouran Akeri (HFE) (Min) @ Ic, Vce : 80 @ 100mA, 5V
    Pouvwa - Max : 900mW
    Frekans - Tranzisyon : 120MHz
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake / Ka : TO-226-3, TO-92-3 Long Body
    Pake Aparèy Founisè : LSTM

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