Toshiba Semiconductor and Storage - CMG06(TE12L,Q,M)

KEY Part #: K6431700

CMG06(TE12L,Q,M) Pricing (USD) [871993PC Stock]

  • 1 pcs$0.04242

Nimewo Pati:
CMG06(TE12L,Q,M)
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
DIODE GEN PURP 600V 1A M-FLAT. Rectifiers 600V Vrrm 1.0A IF 1.1V VFM 15A IFRM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - IGBTs - Modil yo, Transistors - JFETs, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Diodes - RF, Diodes - Rèkteur - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage CMG06(TE12L,Q,M) electronic components. CMG06(TE12L,Q,M) can be shipped within 24 hours after order. If you have any demands for CMG06(TE12L,Q,M), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CMG06(TE12L,Q,M) Atribi pwodwi yo

Nimewo Pati : CMG06(TE12L,Q,M)
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : DIODE GEN PURP 600V 1A M-FLAT
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 1A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 10µA @ 600V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : SOD-128
Pake Aparèy Founisè : M-FLAT (2.4x3.8)
Operating Tanperati - Junction : -40°C ~ 150°C

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