[3606PC Stock]
- Nimewo Pati:
- SS22SHE3_A/H
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE SCHOTTKY 20V 2A DO214AC.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division SS22SHE3_A/H electronic components. SS22SHE3_A/H can be shipped within 24 hours after order. If you have any demands for SS22SHE3_A/H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SS22SHE3_A/H Atribi pwodwi yo
Nimewo Pati :
SS22SHE3_A/H
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE SCHOTTKY 20V 2A DO214AC
Seri :
Automotive, AEC-Q101
Estati Pati :
Discontinued at Digi-Key
Kalite dyòd :
Schottky
Voltage - DC Ranvèse (Vr) (Max) :
20V
Kouran - Mwayèn Rèktifye (Io) :
2A
Voltage - Forward (Vf) (Max) @ Si :
550mV @ 2A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
200µA @ 20V
Kapasite @ Vr, F :
130pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AC, SMA
Pake Aparèy Founisè :
DO-214AC (SMA)
Operating Tanperati - Junction :
-55°C ~ 150°C
Dènye nouvèl
Ou ka enterese tou
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VS-8EWF04S-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 8A TO252AA. Diodes - General Purpose, Power, Switching New Input Diodes - D-PAK-e3
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