[13024PC Stock]
- Nimewo Pati:
- IRFU12N25D
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 250V 14A I-PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal, Tiristors - DIACs, SIDACs, Diodes - RF and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRFU12N25D electronic components. IRFU12N25D can be shipped within 24 hours after order. If you have any demands for IRFU12N25D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFU12N25D Atribi pwodwi yo
Nimewo Pati :
IRFU12N25D
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 250V 14A I-PAK
Seri :
HEXFET®
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
14A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
260 mOhm @ 8.4A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
810pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
144W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
IPAK (TO-251)
Pake / Ka :
TO-251-3 Short Leads, IPak, TO-251AA
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