Infineon Technologies - BSM10GP120BOSA1

KEY Part #: K6534536

BSM10GP120BOSA1 Pricing (USD) [1140PC Stock]

  • 1 pcs$37.98921

Nimewo Pati:
BSM10GP120BOSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT 2 LOW POWER ECONO2-5.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modil yo, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSM10GP120BOSA1 Atribi pwodwi yo

Nimewo Pati : BSM10GP120BOSA1
Manifakti : Infineon Technologies
Deskripsyon : IGBT 2 LOW POWER ECONO2-5
Seri : -
Estati Pati : Not For New Designs
Kalite IGBT : -
Nou konte genyen : Three Phase Inverter
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 20A
Pouvwa - Max : 100W
Vce (sou) (Max) @ Vge, Ic : 2.85V @ 15V, 10A
Kouran - Cutoff Pèseptè (Max) : 500µA
Antre kapasite (Cies) @ Vce : 600pF @ 25V
Antre : Three Phase Bridge Rectifier
NTC thermistor : Yes
Operating Tanperati : -40°C ~ 125°C
Mounting Kalite : Chassis Mount
Pake / Ka : Module
Pake Aparèy Founisè : Module