Taiwan Semiconductor Corporation - 1N5406GHA0G

KEY Part #: K6431979

1N5406GHA0G Pricing (USD) [1257008PC Stock]

  • 1 pcs$0.02943

Nimewo Pati:
1N5406GHA0G
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
DIODE GEN PURP 600V 3A DO201AD. Rectifiers 3A 600V Standard Recov Rectifier
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N5406GHA0G Atribi pwodwi yo

Nimewo Pati : 1N5406GHA0G
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : DIODE GEN PURP 600V 3A DO201AD
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 1V @ 3A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 5µA @ 600V
Kapasite @ Vr, F : 25pF @ 4V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : DO-201AD, Axial
Pake Aparèy Founisè : DO-201AD
Operating Tanperati - Junction : -55°C ~ 150°C

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