Vishay Semiconductor Diodes Division - VS-MBR10T100

KEY Part #: K6439566

VS-MBR10T100 Pricing (USD) [147847PC Stock]

  • 1 pcs$0.26400
  • 1,000 pcs$0.26268

Nimewo Pati:
VS-MBR10T100
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 100V 10A TO220AC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Tiristors - SCR - Modil yo, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-MBR10T100 electronic components. VS-MBR10T100 can be shipped within 24 hours after order. If you have any demands for VS-MBR10T100, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-MBR10T100 Atribi pwodwi yo

Nimewo Pati : VS-MBR10T100
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 100V 10A TO220AC
Seri : -
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 10A
Voltage - Forward (Vf) (Max) @ Si : 790mV @ 10A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 100µA @ 100V
Kapasite @ Vr, F : 400pF @ 5V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : TO-220-2
Pake Aparèy Founisè : TO-220AC
Operating Tanperati - Junction : -55°C ~ 175°C

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