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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. CPH6347-TL-W

ON Semiconductor - CPH6347-TL-W

KEY Part #: K6411766

CPH6347-TL-W Pricing (USD) [574808PC Stock]

  • 1 pcs$0.06435
  • 6,000 pcs$0.05804
Nimewo Pati:
CPH6347-TL-W
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET P-CH 20V 6A CPH6.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Modil pouvwa chofè, Tiristors - TRIACs, Tiristors - SCR, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor CPH6347-TL-W electronic components. CPH6347-TL-W can be shipped within 24 hours after order. If you have any demands for CPH6347-TL-W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CPH6347-TL-W Atribi pwodwi yo

Nimewo Pati : CPH6347-TL-W
Manifakti : ON Semiconductor
Deskripsyon : MOSFET P-CH 20V 6A CPH6
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 39 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id : 1.4V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 10.5nC @ 4.5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 860pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.6W (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 6-CPH
Pake / Ka : SOT-23-6 Thin, TSOT-23-6

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