NRVBM110ET1G Pricing (USD) [577363PC Stock]
- 1 pcs$0.06760
- 3,000 pcs$0.06726
- Nimewo Pati:
- NRVBM110ET1G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- DIODE SCHOTTKY 10V 1A POWERMITE. Schottky Diodes & Rectifiers SCHOTTKY 10V 1A
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - RF, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor NRVBM110ET1G electronic components. NRVBM110ET1G can be shipped within 24 hours after order. If you have any demands for NRVBM110ET1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NRVBM110ET1G Atribi pwodwi yo
Nimewo Pati :
NRVBM110ET1G
Manifakti :
ON Semiconductor
Deskripsyon :
DIODE SCHOTTKY 10V 1A POWERMITE
Seri :
POWERMITE®
Estati Pati :
Active
Kalite dyòd :
Schottky
Voltage - DC Ranvèse (Vr) (Max) :
10V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
595mV @ 2A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
1µA @ 10V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-216AA
Pake Aparèy Founisè :
Powermite
Operating Tanperati - Junction :
-55°C ~ 150°C
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