Toshiba Semiconductor and Storage - TK14G65W5,RQ

KEY Part #: K6418537

TK14G65W5,RQ Pricing (USD) [67891PC Stock]

  • 1 pcs$0.57593
  • 1,000 pcs$0.49615

Nimewo Pati:
TK14G65W5,RQ
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET N-CH 650V 13.7A DPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage TK14G65W5,RQ electronic components. TK14G65W5,RQ can be shipped within 24 hours after order. If you have any demands for TK14G65W5,RQ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK14G65W5,RQ Atribi pwodwi yo

Nimewo Pati : TK14G65W5,RQ
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 650V 13.7A DPAK
Seri : DTMOSIV
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 13.7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 300 mOhm @ 6.9A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 690µA
Chaje Gate (Qg) (Max) @ Vgs : 40nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 1300pF @ 300V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 130W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB