[12236PC Stock]
- Nimewo Pati:
- G3SBA80-E3/51
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- BRIDGE RECT 1PHASE 800V 2.3A GBU. Bridge Rectifiers 800 Volt 4.0 Amp Glass Passivated
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Modil pouvwa chofè, Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single and Diodes - Rèkteur - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division G3SBA80-E3/51 electronic components. G3SBA80-E3/51 can be shipped within 24 hours after order. If you have any demands for G3SBA80-E3/51, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
G3SBA80-E3/51 Atribi pwodwi yo
Nimewo Pati :
G3SBA80-E3/51
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
BRIDGE RECT 1PHASE 800V 2.3A GBU
Seri :
-
Estati Pati :
Obsolete
Kalite dyòd :
Single Phase
Teknoloji :
Standard
Voltage - Peak Ranvèse (Max) :
800V
Kouran - Mwayèn Rèktifye (Io) :
2.3A
Voltage - Forward (Vf) (Max) @ Si :
1V @ 2A
Kouran - Fèy Reverse @ Vr :
5µA @ 800V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
4-SIP, GBU
Pake Aparèy Founisè :
GBU
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