Diodes Incorporated - ZXMN2A02X8TC

KEY Part #: K6411068

[8491PC Stock]


    Nimewo Pati:
    ZXMN2A02X8TC
    Manifakti:
    Diodes Incorporated
    Detaye deskripsyon:
    MOSFET N-CH 20V 6.2A 8-MSOP.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Modil pouvwa chofè, Tiristors - DIACs, SIDACs, Tiristors - SCR, Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF and Diodes - Bridge rèktifikateur ...
    Avantaj konpetitif:
    We specialize in Diodes Incorporated ZXMN2A02X8TC electronic components. ZXMN2A02X8TC can be shipped within 24 hours after order. If you have any demands for ZXMN2A02X8TC, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    ZXMN2A02X8TC Atribi pwodwi yo

    Nimewo Pati : ZXMN2A02X8TC
    Manifakti : Diodes Incorporated
    Deskripsyon : MOSFET N-CH 20V 6.2A 8-MSOP
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.2A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
    RD sou (Max) @ Id, Vgs : 20 mOhm @ 11A, 4.5V
    Vgs (th) (Max) @ Id : 700mV @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 18.6nC @ 4.5V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 1900pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 1.1W (Ta)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : 8-MSOP
    Pake / Ka : 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)