Vishay Semiconductor Diodes Division - S1AFJ-M3/6A

KEY Part #: K6428234

S1AFJ-M3/6A Pricing (USD) [1010386PC Stock]

  • 1 pcs$0.03661
  • 14,000 pcs$0.03347

Nimewo Pati:
S1AFJ-M3/6A
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 600V 1A DO221AC. Rectifiers 1A, 600V, SLIM SMA, STD GPP, SM RECT
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Objektif espesyal, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division S1AFJ-M3/6A electronic components. S1AFJ-M3/6A can be shipped within 24 hours after order. If you have any demands for S1AFJ-M3/6A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S1AFJ-M3/6A Atribi pwodwi yo

Nimewo Pati : S1AFJ-M3/6A
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 600V 1A DO221AC
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 1A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 1.47µs
Kouran - Fèy Reverse @ Vr : 5µA @ 600V
Kapasite @ Vr, F : 7.9pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-221AC, SMA Flat Leads
Pake Aparèy Founisè : DO-221AC (SlimSMA)
Operating Tanperati - Junction : -55°C ~ 150°C

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