MBR600200CT Pricing (USD) [729PC Stock]
- 1 pcs$63.61256
- 25 pcs$37.09736
- Nimewo Pati:
- MBR600200CT
- Manifakti:
- GeneSiC Semiconductor
- Detaye deskripsyon:
- DIODE SCHOTTKY 200V 300A 2 TOWER. Schottky Diodes & Rectifiers 150V 600A Forward
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - Rèkteur - Arrays, Tiristors - SCR, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - RF and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in GeneSiC Semiconductor MBR600200CT electronic components. MBR600200CT can be shipped within 24 hours after order. If you have any demands for MBR600200CT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MBR600200CT Atribi pwodwi yo
Nimewo Pati :
MBR600200CT
Manifakti :
GeneSiC Semiconductor
Deskripsyon :
DIODE SCHOTTKY 200V 300A 2 TOWER
Seri :
-
Estati Pati :
Active
Konfigirasyon dyòd :
1 Pair Common Cathode
Kalite dyòd :
Schottky
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) :
300A
Voltage - Forward (Vf) (Max) @ Si :
920mV @ 300A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
3mA @ 200V
Operating Tanperati - Junction :
-55°C ~ 150°C
Mounting Kalite :
Chassis Mount
Pake / Ka :
Twin Tower
Pake Aparèy Founisè :
Twin Tower
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