Manifakti :
Microsemi Corporation
Deskripsyon :
DIODE GEN PURP 50V 2.5A DO216
Voltage - DC Ranvèse (Vr) (Max) :
50V
Kouran - Mwayèn Rèktifye (Io) :
2.5A
Voltage - Forward (Vf) (Max) @ Si :
975mV @ 2A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
25ns
Kouran - Fèy Reverse @ Vr :
2µA @ 50V
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DO-216
Operating Tanperati - Junction :
-55°C ~ 150°C