ES2DHE3J_A/H Pricing (USD) [209688PC Stock]
- 1 pcs$0.17639
- 750 pcs$0.16611
- Nimewo Pati:
- ES2DHE3J_A/H
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 200V 2A DO214AA. Rectifiers 2A,200V,20ns, SMB,UF Rect, SMD
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - TRIACs, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - RF, Tiristors - SCR, Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction and Diodes - Varyab kapasite (Varicaps, Varactors) ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division ES2DHE3J_A/H electronic components. ES2DHE3J_A/H can be shipped within 24 hours after order. If you have any demands for ES2DHE3J_A/H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ES2DHE3J_A/H Atribi pwodwi yo
Nimewo Pati :
ES2DHE3J_A/H
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 200V 2A DO214AA
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
2A
Voltage - Forward (Vf) (Max) @ Si :
900mV @ 2A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
20ns
Kouran - Fèy Reverse @ Vr :
10µA @ 200V
Kapasite @ Vr, F :
18pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AA, SMB
Pake Aparèy Founisè :
DO-214AA (SMB)
Operating Tanperati - Junction :
-55°C ~ 150°C
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