Vishay Siliconix - SI3446ADV-T1-GE3

KEY Part #: K6406171

[1411PC Stock]


    Nimewo Pati:
    SI3446ADV-T1-GE3
    Manifakti:
    Vishay Siliconix
    Detaye deskripsyon:
    MOSFET N-CH 20V 6A 6-TSOP.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Diodes - Zener - Single, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - RF, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Single, Transistors - IGBTs - Single and Diodes - RF ...
    Avantaj konpetitif:
    We specialize in Vishay Siliconix SI3446ADV-T1-GE3 electronic components. SI3446ADV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3446ADV-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI3446ADV-T1-GE3 Atribi pwodwi yo

    Nimewo Pati : SI3446ADV-T1-GE3
    Manifakti : Vishay Siliconix
    Deskripsyon : MOSFET N-CH 20V 6A 6-TSOP
    Seri : TrenchFET®
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
    RD sou (Max) @ Id, Vgs : 37 mOhm @ 5.8A, 4.5V
    Vgs (th) (Max) @ Id : 1.8V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 10V
    Vgs (Max) : ±12V
    Antre kapasite (Ciss) (Max) @ Vds : 640pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 2W (Ta), 3.2W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : 6-TSOP
    Pake / Ka : SOT-23-6 Thin, TSOT-23-6