Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
DIODE GEN PURP 200V 1A SUB SMA
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
950mV @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
35ns
Kouran - Fèy Reverse @ Vr :
5µA @ 200V
Kapasite @ Vr, F :
10pF @ 1V, 1MHz
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Sub SMA
Operating Tanperati - Junction :
-55°C ~ 150°C