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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

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  1. Lakay
  2. Pwodwi yo
  3. Sikwi entegre Integrated (IC)
  4. PMIC - Chofè Gate
  5. RT7021BGN

Richtek USA Inc. - RT7021BGN

KEY Part #: K1220762

[2277PC Stock]

    Nimewo Pati:
    RT7021BGN
    Manifakti:
    Richtek USA Inc.
    Detaye deskripsyon:
    IC HI-SIDE MOSFET SWITCH DIP8.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: IC Chips, IC espesyalize yo, Embedded - Microprocessors, PMIC - Dirije Chofè yo, Entèfas - Vwa Dosye ak lèktur, Embedded - FPGAs (Field Programmable Gate Array) a, Revèy / Distribisyon - Minis pwogramasyon ak osila and Embedded - Sistèm Sou Chip (SoC) ...
    Avantaj konpetitif:
    We specialize in Richtek USA Inc. RT7021BGN electronic components. RT7021BGN can be shipped within 24 hours after order. If you have any demands for RT7021BGN, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RT7021BGN Atribi pwodwi yo

    Nimewo Pati : RT7021BGN
    Manifakti : Richtek USA Inc.
    Deskripsyon : IC HI-SIDE MOSFET SWITCH DIP8
    Seri : -
    Estati Pati : Obsolete
    Kondwi konte genyen : High-Side or Low-Side
    Kalite Chèn : Independent
    Kantite Chofè yo : 2
    Kalite Gate : IGBT, N-Channel MOSFET
    Voltage - Pwovizyon pou : 13V ~ 20V
    Vòltaj lojik - VIL, VIH : 0.8V, 2.5V
    Kouran - Peak Sòti (Sous, Lavabo) : 300mA, 600mA
    Kalite Antre : Non-Inverting
    Segondè Voltage Side - Max (Bootstrap) : 600V
    Rise / Fall Time (Tip) : 70ns, 35ns
    Operating Tanperati : -40°C ~ 125°C (TA)
    Mounting Kalite : Through Hole
    Pake / Ka : 8-DIP (0.300", 7.62mm)
    Pake Aparèy Founisè : 8-DIP
    Ou ka enterese tou
    Pati cho