Manifakti :
GeneSiC Semiconductor
Deskripsyon :
DIODE SCHOTTKY 35V 200A 3 TOWER
Konfigirasyon dyòd :
1 Pair Common Cathode
Voltage - DC Ranvèse (Vr) (Max) :
35V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) :
200A
Voltage - Forward (Vf) (Max) @ Si :
600mV @ 200A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
3mA @ 35V
Operating Tanperati - Junction :
-55°C ~ 150°C
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
Three Tower