Nimewo Pati :
HN3C10FUTE85LF
Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
RF TRANS 2 NPN 12V 7GHZ US6
Kalite tranzistò :
2 NPN (Dual)
Voltage - Pèseptè ki emèt deba (Max) :
12V
Frekans - Tranzisyon :
7GHz
Bwi figi (dB Typ @ f) :
1.1dB @ 1GHz
DC Kouran Akeri (HFE) (Min) @ Ic, Vce :
80 @ 20mA, 10V
Kouran - Pèseptè (Ic) (Max) :
80mA
Mounting Kalite :
Surface Mount
Pake / Ka :
6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè :
US6