EGL34GHE3_A/I Pricing (USD) [732237PC Stock]
- 1 pcs$0.05051
- Nimewo Pati:
- EGL34GHE3_A/I
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 400V 500MA DO213. Rectifiers 0.5A,400V,50NS AEC-Q101 Qualified
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Arrays, Modil pouvwa chofè, Transistors - JFETs and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division EGL34GHE3_A/I electronic components. EGL34GHE3_A/I can be shipped within 24 hours after order. If you have any demands for EGL34GHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EGL34GHE3_A/I Atribi pwodwi yo
Nimewo Pati :
EGL34GHE3_A/I
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 400V 500MA DO213
Seri :
Automotive, AEC-Q101, Superectifier®
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
400V
Kouran - Mwayèn Rèktifye (Io) :
500mA
Voltage - Forward (Vf) (Max) @ Si :
1.35V @ 500mA
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
50ns
Kouran - Fèy Reverse @ Vr :
5µA @ 400V
Kapasite @ Vr, F :
7pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-213AA (Glass)
Pake Aparèy Founisè :
DO-213AA (GL34)
Operating Tanperati - Junction :
-65°C ~ 175°C
Dènye nouvèl
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