Nimewo Pati :
GPP60B-E3/54
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 100V 6A P600
Voltage - DC Ranvèse (Vr) (Max) :
100V
Kouran - Mwayèn Rèktifye (Io) :
6A
Voltage - Forward (Vf) (Max) @ Si :
1.1V @ 6A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
5.5µs
Kouran - Fèy Reverse @ Vr :
5µA @ 100V
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
P600
Operating Tanperati - Junction :
-55°C ~ 175°C