Vishay Semiconductor Diodes Division - AS3BD-M3/I

KEY Part #: K6457721

AS3BD-M3/I Pricing (USD) [651490PC Stock]

  • 1 pcs$0.05677

Nimewo Pati:
AS3BD-M3/I
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE AVALANCHE 200V 3A DO214AA. Rectifiers 3A, 200V, SMB, Aval
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Tiristors - DIACs, SIDACs, Diodes - RF, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modil yo and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division AS3BD-M3/I electronic components. AS3BD-M3/I can be shipped within 24 hours after order. If you have any demands for AS3BD-M3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

AS3BD-M3/I Atribi pwodwi yo

Nimewo Pati : AS3BD-M3/I
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE AVALANCHE 200V 3A DO214AA
Seri : -
Estati Pati : Active
Kalite dyòd : Avalanche
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 3A (DC)
Voltage - Forward (Vf) (Max) @ Si : 1.05V @ 3A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 20µA @ 600V
Kapasite @ Vr, F : 40pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AA, SMB
Pake Aparèy Founisè : DO-214AA (SMB)
Operating Tanperati - Junction : -55°C ~ 175°C

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