IHW30N110R3FKSA1 Pricing (USD) [17745PC Stock]
- 1 pcs$2.07570
- 10 pcs$1.86372
- 100 pcs$1.52694
- 500 pcs$1.29984
- 1,000 pcs$1.04004
- Nimewo Pati:
- IHW30N110R3FKSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- IGBT 1100V 60A 333W TO247-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Single, Transistors - IGBTs - Modil yo, Tiristors - SCR - Modil yo, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IHW30N110R3FKSA1 electronic components. IHW30N110R3FKSA1 can be shipped within 24 hours after order. If you have any demands for IHW30N110R3FKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IHW30N110R3FKSA1 Atribi pwodwi yo
Nimewo Pati :
IHW30N110R3FKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
IGBT 1100V 60A 333W TO247-3
Seri :
-
Estati Pati :
Active
Kalite IGBT :
Trench
Voltage - Pèseptè ki emèt deba (Max) :
1100V
Kouran - Pèseptè (Ic) (Max) :
60A
Kouran - Pèseptè batman (Icm) :
90A
Vce (sou) (Max) @ Vge, Ic :
1.75V @ 15V, 30A
Pouvwa - Max :
333W
Oblije chanje enèji :
1.15mJ (off)
Kalite Antre :
Standard
Gate chaje :
180nC
Td (on / off) @ 25 ° C :
-/350ns
Kondisyon egzamen an :
600V, 30A, 15 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-40°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-247-3
Pake Aparèy Founisè :
PG-TO247-3
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