Manifakti :
Microsemi Corporation
Deskripsyon :
DIODE GEN PURP 600V 3A AXIAL
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
3A
Voltage - Forward (Vf) (Max) @ Si :
1.5V @ 9A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
400ns
Kouran - Fèy Reverse @ Vr :
2µA @ 600V
Mounting Kalite :
Through Hole
Operating Tanperati - Junction :
-65°C ~ 175°C