Vishay Semiconductor Diodes Division - NSF8KTHE3_A/P

KEY Part #: K6439151

NSF8KTHE3_A/P Pricing (USD) [128710PC Stock]

  • 1 pcs$0.28737
  • 1,000 pcs$0.26162

Nimewo Pati:
NSF8KTHE3_A/P
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 800V 8A ITO220AC. Rectifiers 8A 800V Glass Psvtd AEC-Q101 Qualified
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Modil yo, Tiristors - SCR - Modil yo, Diodes - Zener - Single, Transistors - Objektif espesyal, Diodes - Bridge rèktifikateur, Diodes - Varyab kapasite (Varicaps, Varactors) and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division NSF8KTHE3_A/P electronic components. NSF8KTHE3_A/P can be shipped within 24 hours after order. If you have any demands for NSF8KTHE3_A/P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NSF8KTHE3_A/P Atribi pwodwi yo

Nimewo Pati : NSF8KTHE3_A/P
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 800V 8A ITO220AC
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 800V
Kouran - Mwayèn Rèktifye (Io) : 8A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 8A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 10µA @ 800V
Kapasite @ Vr, F : 55pF @ 4V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : TO-220-2 Insulated, TO-220AC
Pake Aparèy Founisè : ITO-220AC
Operating Tanperati - Junction : -55°C ~ 150°C

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