Vishay Semiconductor Diodes Division - V30120SG-M3/4W

KEY Part #: K6427038

V30120SG-M3/4W Pricing (USD) [137359PC Stock]

  • 1 pcs$0.28415
  • 1,000 pcs$0.28274

Nimewo Pati:
V30120SG-M3/4W
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE SCHOTTKY 30A 120V TO-220AB. Schottky Diodes & Rectifiers 30A 120V Schottky TrenchMOS
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division V30120SG-M3/4W electronic components. V30120SG-M3/4W can be shipped within 24 hours after order. If you have any demands for V30120SG-M3/4W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

V30120SG-M3/4W Atribi pwodwi yo

Nimewo Pati : V30120SG-M3/4W
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 30A 120V TO-220AB
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 120V
Kouran - Mwayèn Rèktifye (Io) : 30A
Voltage - Forward (Vf) (Max) @ Si : 1.28V @ 30A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 500µA @ 120V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3
Pake Aparèy Founisè : TO-220AB
Operating Tanperati - Junction : -40°C ~ 150°C

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