Vishay Semiconductor Diodes Division - RGL34J/1

KEY Part #: K6425973

RGL34J/1 Pricing (USD) [730465PC Stock]

  • 1 pcs$0.05343
  • 8,000 pcs$0.05317

Nimewo Pati:
RGL34J/1
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 600V 500MA DO213.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Diodes - Zener - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division RGL34J/1 electronic components. RGL34J/1 can be shipped within 24 hours after order. If you have any demands for RGL34J/1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RGL34J/1 Atribi pwodwi yo

Nimewo Pati : RGL34J/1
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 600V 500MA DO213
Seri : SUPERECTIFIER®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 500mA
Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 500mA
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 250ns
Kouran - Fèy Reverse @ Vr : 5µA @ 600V
Kapasite @ Vr, F : 4pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-213AA (Glass)
Pake Aparèy Founisè : DO-213AA (GL34)
Operating Tanperati - Junction : -65°C ~ 175°C

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