Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 600V 500MA DO213
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
500mA
Voltage - Forward (Vf) (Max) @ Si :
1.3V @ 500mA
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
250ns
Kouran - Fèy Reverse @ Vr :
5µA @ 600V
Kapasite @ Vr, F :
4pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-213AA (Glass)
Pake Aparèy Founisè :
DO-213AA (GL34)
Operating Tanperati - Junction :
-65°C ~ 175°C