Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 1.2KV 30A TO247AC
Voltage - DC Ranvèse (Vr) (Max) :
1200V
Kouran - Mwayèn Rèktifye (Io) :
30A
Voltage - Forward (Vf) (Max) @ Si :
4.1V @ 30A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
170ns
Kouran - Fèy Reverse @ Vr :
40µA @ 1200V
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247AC Modified
Operating Tanperati - Junction :
-55°C ~ 150°C