Vishay Semiconductor Diodes Division - HFA30PB120

KEY Part #: K6451372

[80PC Stock]


    Nimewo Pati:
    HFA30PB120
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    DIODE GEN PURP 1.2KV 30A TO247AC.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Tiristors - SCR - Modil yo, Transistors - JFETs, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - IGBTs - Single ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division HFA30PB120 electronic components. HFA30PB120 can be shipped within 24 hours after order. If you have any demands for HFA30PB120, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    HFA30PB120 Atribi pwodwi yo

    Nimewo Pati : HFA30PB120
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : DIODE GEN PURP 1.2KV 30A TO247AC
    Seri : HEXFRED®
    Estati Pati : Obsolete
    Kalite dyòd : Standard
    Voltage - DC Ranvèse (Vr) (Max) : 1200V
    Kouran - Mwayèn Rèktifye (Io) : 30A
    Voltage - Forward (Vf) (Max) @ Si : 4.1V @ 30A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : 170ns
    Kouran - Fèy Reverse @ Vr : 40µA @ 1200V
    Kapasite @ Vr, F : -
    Mounting Kalite : Through Hole
    Pake / Ka : TO-247-2
    Pake Aparèy Founisè : TO-247AC Modified
    Operating Tanperati - Junction : -55°C ~ 150°C

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