Vishay Semiconductor Diodes Division - GBL10-M3/51

KEY Part #: K6538135

GBL10-M3/51 Pricing (USD) [143062PC Stock]

  • 1 pcs$0.25854
  • 2,400 pcs$0.24623

Nimewo Pati:
GBL10-M3/51
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
BRIDGE RECT 1PHASE 1KV 4A GBL. Bridge Rectifiers 4A,1000V,GPP,INLINE BRIDGE
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Arrays, Transistors - IGBTs - Arrays and Transistors - IGBTs - Single ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division GBL10-M3/51 electronic components. GBL10-M3/51 can be shipped within 24 hours after order. If you have any demands for GBL10-M3/51, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GBL10-M3/51 Atribi pwodwi yo

Nimewo Pati : GBL10-M3/51
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : BRIDGE RECT 1PHASE 1KV 4A GBL
Seri : -
Estati Pati : Active
Kalite dyòd : Single Phase
Teknoloji : Standard
Voltage - Peak Ranvèse (Max) : 1kV
Kouran - Mwayèn Rèktifye (Io) : 4A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 4A
Kouran - Fèy Reverse @ Vr : 5µA @ 1000V
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : 4-SIP, GBL
Pake Aparèy Founisè : GBL

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