BYG23M-E3/TR3 Pricing (USD) [751658PC Stock]
- 1 pcs$0.04921
- 7,500 pcs$0.04087
- 15,000 pcs$0.03824
- 37,500 pcs$0.03516
- Nimewo Pati:
- BYG23M-E3/TR3
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE AVALANCHE 1KV 1.5A. Rectifiers 1.5 Amp 1000 Volt
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Transistors - JFETs and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division BYG23M-E3/TR3 electronic components. BYG23M-E3/TR3 can be shipped within 24 hours after order. If you have any demands for BYG23M-E3/TR3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BYG23M-E3/TR3 Atribi pwodwi yo
Nimewo Pati :
BYG23M-E3/TR3
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE AVALANCHE 1KV 1.5A
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Avalanche
Voltage - DC Ranvèse (Vr) (Max) :
1000V
Kouran - Mwayèn Rèktifye (Io) :
1.5A
Voltage - Forward (Vf) (Max) @ Si :
1.7V @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
75ns
Kouran - Fèy Reverse @ Vr :
5µA @ 1000V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214AC, SMA
Pake Aparèy Founisè :
DO-214AC (SMA)
Operating Tanperati - Junction :
-55°C ~ 150°C
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