Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
RECT BRIDGE 800V 110A MTK
Estrikti :
Bridge, 3-Phase - All SCRs
Kantite SCR, Diodes :
6 SCRs
Voltage - Off State :
800V
Kouran - Sou Eta (Li (AV)) (Max) :
110A
Kouran - Sou Eta (Li (RMS)) (Max) :
-
Voltage - Gate deklanche (Vgt) (Max) :
2.5V
Kouran - Gate deklanche (Igt) (Max) :
150mA
Kouran - Non Rep Repiblik 50, 60Hz (Itsm) :
1130A, 1180A
Kouran - Kenbe (Ih) (Max) :
200mA
Operating Tanperati :
-40°C ~ 125°C (TJ)
Mounting Kalite :
Chassis Mount